AOU413 datasheet(1/5 Pages) AOSMD

No de pièce	AOU413

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	AOSMD [Alpha & Omega Semiconductors]

Site Internet	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

40

50

RθJL

2.5

3

V

±20

25

A

-12

30

50

A

Gate-Source Voltage

Drain-Source Voltage

-40

Pulsed Drain Current

-12

-30

Avalanche Current

C

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TA=25°C

G

TA=100°C

G

Absolute Maximum Ratings TA=25°C unless otherwise noted

ID

Junction and Storage Temperature Range

-55 to 175

Repetitive avalanche energy L=0.1mH

C

mJ

Power Dissipation

B

TC=25°C

PD

W

TC=100°C

°C

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

Steady-State

°C/W

AOU413

P-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = -40V

ID = -12A (VGS = -10V)

RDS(ON) < 45mΩ (VGS = -10V)

RDS(ON) < 69mΩ (VGS = -4.5V)

General Description

The AOU413 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications. Standard Product

AOU413 is Pb-free (meets ROHS & Sony 259

specifications). AOU413L is a Green Product

ordering option. AOU413 and AOU413L are

electrically identical.

G

D

S

Top View

Drain Connected

to Tab

TO-251

G

D

S

Alpha & Omega Semiconductor, Ltd.

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