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ADRF5473BCZ-GP Fiches technique(PDF) 1 Page - Analog Devices

No de pièce ADRF5473BCZ-GP
Description  Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz
PDF  17 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

ADRF5473BCZ-GP Fiches technique(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5473
Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
►
Ultrawideband frequency range: 100 MHz to 40 GHz
►
Attenuation range: 31.5 dB with 0.5 dB steps
►
Bond pads for wire bond and ribbon bond
►
Low insertion loss
►
1.7 dB typical up to 18 GHz
►
2.2 dB typical up to 26 GHz
►
3.2 dB typical up to 40 GHz
►
Attenuation accuracy
►
±(0.10 + 2.0% of attenuation state) typical up to 26 GHz
►
±(0.13 + 1.5% of attenuation state) typical up to 35 GHz
►
±(0.30 + 1.5% of attenuation state) typical up to 40 GHz
►
Typical step error
►
±0.12 dB typical up to 26 GHz
►
±0.30 dB typical up to 35 GHz
►
±0.60 dB typical up to 40 GHz
►
High input linearity
►
P0.1dB insertion loss state: 31 dBm typical
►
P0.1dB other attenuation states: 28 dBm typical
►
IP3: 50 dBm typical
►
High RF power handling
►
26 dBm steady state average
►
31 dBm steady state peak
►
Tight distribution in relative phase
►
No low frequency spurious signals
►
SPI and parallel mode control, CMOS/LVTTL compatible
►
RF amplitude settling time (0.1 dB of final RF output): 250 ns
►
18-pad, 3.171 mm × 1.616 mm, die on carrier [CHIP]
APPLICATIONS
►
Test and instrumentation
►
Cellular infrastructure: 5G millimeter wave
►
Military radios, radars, and electronic counter measures (ECMs)
►
Microwave radios and very small aperture terminals (VSATs)
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The ADRF5473 is a 6-bit digital attenuator with a 31.5 dB attenua-
tion range in 0.5 dB steps manufactured in a silicon process attach-
ed on a gallium arsenide (GaAs) carrier substrate. The substrate
incorporates the bond pads for chip and wire assembly, and the
bottom of the device is metalized and connected to ground.
This device operates from 100 MHz to 40 GHz with better than
3.2 dB of insertion loss and excellent attenuation accuracy. The
ADRF5473 has an RF input power handling capability of 26 dBm
average and 31 dBm peak for all states.
The ADRF5473 requires a dual-supply voltage of +3.3 V and
−3.3 V. The device features serial peripheral interface (SPI), paral-
lel mode control, and complementary metal-oxide semiconductor
(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compati-
ble controls.
The ADRF5473 is designed to match a characteristic impedance of
50 Ω.
Note that when referring to a single function of a multifunction pad
in this data sheet, only the portion of the pad name that is relevant
is mentioned. For full pad names of the multifunction pads, refer to
the section.


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