BAS116 datasheet(1/3 Pages) LEIDITECH

No de pièce	BAS116

Description	Switching Diode

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Fabricant	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Site Internet	http://www.leiditech.com

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BAS116

Rev 2.0 :

www.leiditech.com

01.08.2021

1/3

Switching Diode

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Marking:

A6

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V(BR)

IR= 100µA

75

V

Reverse voltage leakage current

IR

VR=75V

1

µA

Forward voltage

VF

IF=1mA

IF=10mA

IF=50mA

IF=150mA

0.715

0.855

1

1.25

V

Diode capacitance

CD

VR=0, f=1MHz

2

pF

Reveres recovery time

trr

IF=IR=10mA,Irr=0.1×IR,

RL=100Ω

6

ns

SOT-23

1

2

3

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

℃

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

75

V

RMS Reverse Voltage

VR(RMS)

53

V

Forward Continuous Current

IFM

300

mA

Average Rectified Output Current

IO

150

mA

IFSM

2.0

A

Power Dissipation

Pd

225

mW

Thermal Resistance Junction to Ambient

RθJA

℃/W

℃

F

orward Surge Current @t=8.3ms

Non-Repetitive Peak

Junction Temperature

Storage Temperature

Tj

150

TSTG

-55~+150

556

A6

Soliddot = Green molding compound device,

if none,the normal device.

Numéro de pièce similaire - BAS116

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
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Infineon Technologies A...	BAS116	444Kb / 4P	Silicon Low Leakage Diode Mar-10-2004
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