PD70224 datasheet(8/25 Pages) MICROCHIP

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Symbol

Parameter

Conditions

Min

Typ

Max

Units

RDS

FET drain to source resistance ID = 0.6 A

TJ = 25 °C

0.16

0.26

ID = 0.6 A;

–40 °C ≤ TJ ≤ 125 °C

0.38

Leakage current (reverse)

VOUTP – VOUTN = 57 V

μA

VBFD

Backfeed voltage

Between input terminals with

100 kΩ resistor across them

and 57 V between OUTP and

OUTN

2.7

IMAX_Off

Maximum Forward Current

(per bridge) below VTURN_ON

0.45

IMAX_On

Maximum forward current (per

bridge) above VTURN_ON. Per

bridge, while only one bridge

out of the two is active.

1.5

IMAX_LOAD Maximum load current (per

device) above V TURN_ON. Per

device while two bridges are

active and each bridge is

supporting half load.

VD_SUPP

Maximum voltage drop

between INx to SUPP_Sx

pins.

Supp_Sx loaded with 100 kΩ

resistor

IMAX

_SUPP

Maximum current to consume

from SUPP_Sx pins.

VIH

WA_EN – Input high logic

1.35

VIL

WA_EN – Input low logic

1.05

PD70224

Electrical Specifications

Datasheet

DS00003575C-page 8

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