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WSD100N06GDN56 Fiches technique(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No de pièce WSD100N06GDN56
Description  Secondary Side Synchronous Rectification
PDF  5 Pages
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Fabricant  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Site Internet  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD100N06GDN56 Fiches technique(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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N-Ch MOSFET
WSD100N06GDN56
Page 2
www.winsok.tw
Rev 1: Apr.2019
Symbol
Parameter
Min. Typ. Max.
Unit
V(BR)DSS
Drain-Source Breakdown Voltage
60
V
1
30
IGSS
Gate Leakage Current
±100
nA
VGS(TH)
Gate Threshold Voltage
1.2 1.8
2.5
V
3.0
3.6
mΩ
4.4
5.4
mΩ
Qg
Total Gate Charge
58
nC
Qgs
Qgs
Gate-Sour
Charge
16
nC
Qgd
Gate-Drain Charge
4.0
nC
td (on)
Turn-on Delay Time
18
ns
tr
Turn-on Rise Time
8
ns
td(off)
Turn-off Delay Time
50
ns
tf
Turn-off Fall Time
11
ns
Rg
Rg
Gat resistance
0.7
Ω
Ciss
Ciss
In
Capacitance
3458
pF
Coss
Coss
Out
Capacitance
1522
pF
Crss
Reverse Transfer Capacitance
22
pF
IS1,5
Continuous Source Current
55
A
ISM
Pulsed Source Current3
240
A
VSD 2
Diode Forward Voltage
0.8
1.3
V
trr
Reverse Recovery Time
27
ns
Qrr
Reverse Recovery Charge
33
nC
ISD =
1A , VGS=0V
ISD=20A, dlSD/dt=100A/µs
Switching
VDS=30V
VGS=10V
ID=2
0A
VGEN=10V
VDD=30V
ID=
20A
RG=Ω
VGS=0V, VDS=0V, f=1MHz
Dynamic
VGS=0V
VDS=30V
f=1MHz
VGS = ±20V, VDS = 0V
On Characteristics
VGS = VDS, IDS = 250µA
RDS(on)2
Drain-Source On-state Resistance
VGS = 10V, ID = 2
0A
VGS = 4.5V, ID =
15A
Conditions
Static
VGS = 0V, ID = 250μA
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0V
Drain-Source Diode Characteristics and Maximum Ratings
VG=VD=0V , Force Current
µA
TJ=85°C
Electrical Characteristics @TA=25℃ unless otherwise noted
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=40A
4.The power dissipation is limited by 150
℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.



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