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WSF80N06H Fiches technique(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No de pièce WSF80N06H
Description  Load switch. Battery protection.
PDF  5 Pages
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Fabricant  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Site Internet  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF80N06H Fiches technique(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Page 2
www.winsok.tw
Rev 2: Apr.2019
N-Ch MOSFET
WSF80N06H
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
65
---
V
△
BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.052
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=
8A
---
8.0
10
mΩ
VGS(th)
Gate Threshold Voltage
2.0
2.9
4.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.76
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
42
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
---
Ω
Qg
Total Gate Charge (4.5V)
---
28.7
---
Qgs
Gate-Source Charge
---
10.5
---
Qgd
Gate-Drain Charge
---
9.9
---
Td(on)
Turn-On Delay Time
---
10.4
---
Tr
Rise Time
---
9.2
---
Td(off)
Turn-Off Delay Time
---
63
---
Tf
Fall Time
---
4.8
---
Ciss
Input Capacitance
---
3240
---
Coss
Output Capacitance
---
210
---
Crss
Reverse Transfer Capacitance
---
146
---
IS
Continuous Source Current1,5
---
---
47
A
ISM
Pulsed Source Current2,5
---
---
100
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
---
18
---
nS
Qrr
Reverse Recovery Charge
---
14
---
nC
Note :
1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3、The EAS data shows Max. rating . The test condition is V DD =25V,VGS =10V,L=0.1mH,I AS =38A
4、The power dissipation is limited by 150℃ junction temperature
5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
IF=15A , dI/dt=100A/µs ,
TJ=25℃
VDD=30V , VGS=10V , RG=3.3
Ω, ID=15A
ns
VDS=15V , VGS=0V , f=1MHz
pF
VG=VD=0V , Force Current
VGS=VDS , ID =250uA
IDSS
Drain-Source Leakage Current
uA
VDS=48V , VGS=4.5V , ID=15A
nC



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