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2STF1360 Fiches technique(PDF) 3 Page - STMicroelectronics |
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2STF1360 Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 2STF1360 - 2STN1360 2 Electrical Characteristics 3/11 2 Electrical Characteristics Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 80 V 100 nA IEBO Emitter Cut-off Current (IC = 0) VEB = 6 V 100 nA VBE Base-Emitter Voltage VCE = 2 V IC = 100 mA 630 670 730 mV VCE(sat) Note: 1 Collector-Emitter Saturation Voltage IC = 2 A __ _ IB = 100 mA IC = 3 A __ _ IB = 150 mA 150 210 300 500 mV mV VBE(sat) Note: 1 Base-Emitter Saturation Voltage IC = 2 A __ _ IB = 100 mA 0.89 1.2 V hFE Note: 1 DC Current Gain IC = 100 mA _ VCE = 2 V IC = 1 A _ VCE = 2 V 80 160 280 400 td tr ts tf RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time VCC = 10 V IC = 3 A IB1 = - IB2 = 300 mA (see figure 8) 17 81 620 54 20 100 720 65 ns ns ns ns fT Transition Frequency IC = 0.1 A ___ VCE = 10 V 130 MHz |
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