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EMIF03-SIM02F3 Fiches technique(PDF) 2 Page - STMicroelectronics |
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EMIF03-SIM02F3 Fiches technique(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() EMIF03-SIM02F2 2/7 Table 2: Absolute Ratings (limiting values) Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameter and test conditions Value Unit VPP Internal pins (A3, B3, C3): ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge External pins (A2, B1, C2, C1): ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge 2 2 15 8 kV Tj Maximum junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 620 V IRM VRM = 3V 0.2 µA Rd 1.5 Ω R1, R3 Tolerance ± 20% 100 Ω R2 Tolerance ± 20% 47 Ω Cline @ 0V 20 pF I V IF IRM IR IPP VRM VF VBR VCL |
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