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TSZ181H Fiches technique(PDF) 9 Page - STMicroelectronics |
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TSZ181H Fiches technique(HTML) 9 Page - STMicroelectronics |
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9 / 26 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit SR Slew rate(6) Tmin < T < Tmax V/µs 2.4 ts Settling time To 0.1%, Vin=1.5 Vpp 600 ns To 0.01%, Vin=1 Vpp 4 µs en Equivalent input noise voltage density f = 1 kHz 37 nV/√Hz f = 10 kHz 37 en-pp Voltage noise f=0.1 to 10 Hz 0.4 µVpp Cs Channel separation f = 100 Hz 135 dB tinit Initialization time, G=100(7) T = 25 °C 60 µs Tmin < T < Tmax 100 1. Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature. 2. Guaranteed by design 3. CMR is defined as 20xLOG(∆Vicm/∆Vio). 4. SVR is defined as 20xLOG(∆Vcc/∆Vio). 5. EMIRR is defined as -20Log(VRF_Peak/∆Vio), tested on the MiniSO8 package, RF injection on the IN- pin. 6. Slew rate value is calculated as the average between positive and negative slew rates. 7. Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage stabilization. TSZ181H, TSZ182H Electrical characteristics DS13229 - Rev 2 page 9/26 |
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