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TSU112IYST Fiches technique(PDF) 22 Page - STMicroelectronics |
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TSU112IYST Fiches technique(HTML) 22 Page - STMicroelectronics |
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22 / 32 page ![]() 5.9 EMI robustness of nanopower devices Nanopower devices exhibit higher impedance nodes and consequently they are more sensitive to EMI. To improve the natural robustness of the TSU112IY device, we recommend to add three capacitors of around 22 pF each between the two inputs, and between each input and ground. These capacitors lower the impedance of the input at high frequencies and therefore reduce the impact of the radiation TSU112IY EMI robustness of nanopower devices DS13616 - Rev 1 page 22/32 |
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