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2SD2136 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD2136
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2136 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD2136
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·
DC Current Gain-
: hFE=40-250@IC = 1A
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2 V(Max)@ IC = 3A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
3.0
A
ICP
Collector Current-Peak
5.0
A
PC
Collector Power Dissipation
@ TC TC=25℃
1.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-45~150
℃


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