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BAS516 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce BAS516
Description  Switching Diodes Silicon Epitaxial Planar
PDF  5 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

BAS516 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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BAS516
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
VF (4)
IR (1)
IR (2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 25 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA, See Fig. 4.1.
Min
Typ.
0.35
Max
0.715
0.855
1.00
1.25
30
200
3.0
Unit
V
nA
pF
ns
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (trr
rr
rr
rr
) Test circuit
) Test circuit
) Test circuit
) Test circuit
5.
5.
5.
5. Marking
Marking
Marking
Marking
6.
6.
6.
6. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (Unit: mm)
Land Pattern Dimensions (Unit: mm)
Land Pattern Dimensions (Unit: mm)
Land Pattern Dimensions (Unit: mm)
2016-10-20
Rev.1.0
©2016 Toshiba Corporation



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