UT4450G-S08-R datasheet(3/4 Pages) DOINGTER

No de pièce	UT4450G-S08-R

Description	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Fabricant	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Normalized RDSON vs. T

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3 —

Tota l Gate Charge

2,3

VGS=4.5V, VDS=20V,

ID=3A

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2.8

5.6

Qgs

Ga te-Source Cha rge

2,3

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0.5

Qgd

Ga te-Drain “Miller” Charge

2,3

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1.5

Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=1A,TJ=25℃

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Conti nuous Source Current

VG=VD=0V , Force

Current

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6.7

ISM

Pul s ed Source Current

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13.4

Notes:

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. Essentially independent of operating temperature.

Typical Characteristics： (T =25℃ unless otherwise noted)

Fig.1 Continuous Drain Current vs. TC

Fig.2

TC , Case Temperature (℃)

TJ , Junction Temperature (℃)

UT4450G-S08-R

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