UT4435G-S08-R datasheet(1/4 Pages) DOINGTER

No de pièce	UT4435G-S08-R

Description	P-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Fabricant	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Site Internet	http://www.doingter.cn/

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Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-30V,ID=-8A,RDS(ON)<20mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

-8

A

Continuous Drain Current-TC=100℃

-5.1

Pulsed Drain Current

1

-32

EAS

Single Pulse Avalanche Energy

---

mJ

PD

Power Dissipation(TC=25℃)

2.1

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

60

G

D

S1

S

UT4435G-S08-R

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