UP2790G-S08-R datasheet(1/8 Pages) DOINGTER

No de pièce	UP2790G-S08-R

Description	P-Chanel and N-Channel MOSFET use advanced trench technology

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Fabricant	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Site Internet	http://www.doingter.cn/

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Description：

This P-Chanel and N-Channel MOSFET use advanced trench technology

and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)<30mΩ@VGS=10V

P-Channel: VDS=-30V,ID=-7A,RDS(ON)<33mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current

6.5

-7

A

Continuous Drain Current-TC=100℃

5.4

-5.8

Pulsed Drain Current

1

30

-30

EAS

Single Pulse Avalanche Energy

3

---

mJ

PD

Power Dissipation

4

2

W

TJ, TSTG

Operating and Storage Junction Temperature

Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Channel

Max

Units

RƟJA

Thermal Resistance,Junction to Ambient

2

N-Ch

62.5

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

2

P-Ch

62.5

G2

D1

D2

S1

G1

S2

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