SS8050 datasheet(1/3 Pages) LEIDITECH

No de pièce	SS8050

Description	General Purpose Transistors NPN Silicon

PDF	3 Pages

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Fabricant	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Site Internet	http://www.leiditech.com

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1 / 3 page

General Purpose Transistors

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

25

V

Collector-Base Voltage

VCBO

40

V

Emitter-Base Voltage

VEBO

5V

Collector Current

C

1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

PD

TA=25°C

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance,Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

PD

Alumina Substrate,(2) TA=25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance,Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

T j, T St g

-55 to +150

°C

1

BASE

2

EMITTER

COLLECTOR

3

NPN Silicon

FEATURE

High current capacity in compact package.

IC =1.5 A.

Epitaxial planar type.

NPN complement: L8050H

Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

1HA

1HC

10000/Tape&Reel

Shipping

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

1HE

1HG

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

1HG

I

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Dimensions SOT-23

Pin Configuration

S-

SS8050HPLT1G

S-SS8050HPLT3G

S-SS8050HQLT1G

S-SS8050HQLT3G

S-SS8050HRLT1G

S-SS8050HRLT3G

S-SS8050HSLT1G

S-SS8050HSLT3G

SS8050HPLT3G

SS8050HQLT1G

SS8050HQLT3G

SS8050HRLT1G

SS8050HRLT3G

SS8050HSLT1G

SS8050HSLT3G

Rev :

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01.06.2015

SS8050

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