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2SC5145 Fiches technique(PDF) 2 Page - Panasonic Semiconductor

No de pièce 2SC5145
Description  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
PDF  3 Pages
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5145 Fiches technique(HTML) 2 Page - Panasonic Semiconductor

  2SC5145 Datasheet HTML 1Page - Panasonic Semiconductor 2SC5145 Datasheet HTML 2Page - Panasonic Semiconductor 2SC5145 Datasheet HTML 3Page - Panasonic Semiconductor  
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2
Power Transistors
2SC5145
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 50
× 50 × 2mm
Al heat sink
(3) Without heat sink
(P
C=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (˚C)
010
8
26
4
0
8
6
2
5
7
4
1
3
T
C=25˚C
50mA
20mA
100mA
150mA
200mA
300mA
400mA
600mA
800mA
1000mA
I
B=1200mA
Collector to emitter voltage V
CE
(V)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=5
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=5
T
C=–25˚C
25˚C
100˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
T
C=100˚C
25˚C
–25˚C
V
CE=5V
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=10V
f=1MHz
T
C=25˚C
Collector current I
C
(A)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25˚C
Collector to base voltage V
CB
(V)
08
26
47
15
3
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=5
(I
B1=–IB2)
V
CC=200V
T
C=25˚C
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.003
0.01
0.03
0.1
0.3
1
3
10
I
CP
I
C
Non repetitive pulse
T
C=25˚C
10ms
1ms
t=0.5ms
DC
Collector to emitter voltage V
CE
(V)



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