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UTT50P04L-TN3-R Fiches technique(PDF) 6 Page - VBsemi Electronics Co.,Ltd

No de pièce UTT50P04L-TN3-R
Description  P-Channel 4 0 V (D-S) MOSFET
PDF  9 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UTT50P04L-TN3-R Fiches technique(HTML) 6 Page - VBsemi Electronics Co.,Ltd

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Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4
10-3
10-2
10-1
10
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
100
1
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UTT50P04L-TN3-R
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