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LM6401 Fiches technique(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM6401 Fiches technique(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 2 page ![]() (Ta=25C Maximum ratings SOT-23 Plastic-Encapsulate MOSFETS P-Channel 12-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING:1F Parameter Symbol Value Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -5.0 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 A Maximum Power Dissipation PD 0. 35 W Thermal Resistance from Junction to Ambient(t 5s) R JA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~ +150 ℃ θ ≤ Pb-Free package is available Smail Package Outine Surface Mount Device unless otherwise noted) z z z z Pb Lead-free LM6401 Rev : www.leiditech.com 01.06.2018 1/2 |
Numéro de pièce similaire - LM6401 |
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Description similaire - LM6401 |
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