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12N10G-S08-R Fiches technique(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No de pièce 12N10G-S08-R
Description  N-Channel MOSFET uses advanced trench technology
PDF  6 Pages
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Fabricant  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Site Internet  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

12N10G-S08-R Fiches technique(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
---
V
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V
---
---
25
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.7
3
V
△VGS(th)
VGS(th) Temperature Coefficient
---
---
---
mV/℃
RDS(ON)
Static Drain-Source On Resistance
VGS=10V,ID=3A
---
112
135
mΩ
VGS=4.5V,ID=2A
---
120
145
GFS
Forward Transconductance
VDS=5V, ID=3A
---
11
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
610
980
pF
Coss
Output Capacitance
---
40
---
Crss
Reverse Transfer Capacitance
---
25
---
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDS=50V, ID=1A,
RGEN=3.3Ω, VGS=10V
---
7
---
ns
tr
Rise Time
2,3
---
5
---
ns
td(off)
Turn-Off Delay Time
2,3
---
16
---
ns
tf
Fall Time
2,3
---
6
---
ns
Qg
Total Gate Charge
2,3
VGS=10V, VDS=80V,
ID=3A
---
12
20
nC
Qgs
Gate-Source
Charge
2,3
---
2.2
---
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
2.5
---
nC
Drain-Source Diode Characteristics
12N10G-S08-R



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