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MBR20100CT Fiches technique(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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MBR20100CT Fiches technique(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page ![]() MBR20100CT THRU MBR20200CT Features ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Mechanical Data ● Package: TO-220AB Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102 ● Polarity: As marked ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT MBR20100CT MBR20150CT MBR20200CT Device marking code MBR20100CT MBR20150CT MBR20200CT Repetitive Peak Reverse Voltage VRRM V 100 150 200 Average Rectified Output Current @60Hz sine wave, R-load, Ta=25℃ IO A 20 Surge(Non-repetitive)Forward Current @60Hz half sine-wave, 1 cycle, Ta=25℃ IFSM A 150 Current Squared Time @1ms≤t<8.3ms Tj=25℃, I 2t A 2s 94 Storage Temperature Tstg ℃ -55 ~ +175 Junction Temperature Tj ℃ -55 ~ +175 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS MBR20100CT MBR20150CT MBR20200CT Maximum instantaneous forward voltage drop per diode VFM V IFM=10.0A 0.8 0.85 0.9 Maximum DC reverse current at rated DC blocking voltage per diode IRRM1 mA VRM=VRRM Ta=25℃ 0.1 IRRM2 VRM=VRRM Ta=125℃ 20 Schottky Diodes Rev : www.leiditech.com 01.06.2018 1/3 |
Numéro de pièce similaire - MBR20100CT |
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