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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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LMP0160F Fiches technique(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMP0160F Fiches technique(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  LMP0160F Description The LMP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram TO-220F top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP0160F LMP0160F TO-220F - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 60 A Drain Current-Continuous(TC=100 ) ℃ ID (100℃) 42.4 A Pulsed Drain Current IDM 240 A Maximum Power Dissipation PD 40 W Derating factor 0.27 W/℃ Single pulse avalanche energy (Note 5) EAS 290 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Super Trench Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/6 |
Numéro de pièce similaire - LMP0160F |
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