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IRF730F Fiches technique(PDF) 3 Page - First Silicon Co., Ltd |
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IRF730F Fiches technique(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 6 page ![]() MOSFET 2014. 12. 18 3/6 IRF730/F Revision No : 0 ELECTRICAL CHARACTERISTICS(Cont.) VSD TJ = 25°C, ISD =5.5A, VGS = 0V 1.6 V IS 5.5 A ISM 22 A tRR 270 ns QRR TJ = 25°C, ISD =3.5A, dlSD/dt ==100 A/µs 1.8 µC Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Repetitive rating: Pulse width limited by maximum junction temperature. PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage (Note 1) Continuous Source to Drain Current Pulse Source to Drain Current(Note 2) Reverse Recovery Time Reverse Recovery Charge MAX |
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