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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FTK4906 Fiches technique(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4906 Fiches technique(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  40V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Sou rce Voltage ± 20 V ID Drain Current – Continuous (TC=25℃) 15 A Drain Current – Continuous (TC=100℃) 9.5 A IDM Drain Current – Pulsed 1 60 A PD Power Dissipation (TC=25℃) 5.4 W Power Dissipation – Derate above 25℃ 0.043 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 85 ℃/W RθJC Thermal Resistance Junction to Case --- 23 ℃/W BVDSS RDSON ID 40V 9m Ω 15A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 40V, 15A, RDS(ON)=9m Ω@VGS = 10V Improved dv/dt capability Fast switching Green Device Available General Description Features Applications Notebook Load Switch LED applications Hand-Held Device Absolute Maximum Ratings Tc=25 unless otherwise noted Thermal Characteristics SOP8 Pin Configuration D G S D D D D G S S S SEMICONDUCTOR TECHNICAL DATA FTK4906 2018. 03. 16 1/5 Revision No : 0 |
Numéro de pièce similaire - FTK4906 |
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Description similaire - FTK4906 |
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