LM4189 datasheet(1/5 Pages) LEIDITECH

No de pièce	LM4189

Description	P-Channel MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Site Internet	http://www.leiditech.com

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1 / 5 page

General Description

These P-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast

switching applications.

Features

VDS

ID

(at VGS=-10V)

RDS(ON) (at VGS=-10V)

RDS(ON) (at VGS=-4.5V)

-40V

-20A

45mΩ(Max)

65mΩ(Max)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

TC=25°C

I

D

-20

A

TC=100°C

I

D

-12

A

Drain Current – Pulsed

IDM

-80

A

Maximum Power Dissipation

P

D

33

W

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

3.6

℃

/W

Thermal Resistance junction-to-Ambient

R

θJA

62

℃

/W

D

G

S

D

G

S

TO252

100% UIS TESTED!

100% ∆Vds TESTED!

LM4189

MOSFET

P-Channel

Rev 2.0 :

www.leiditech.com

12.01.2019

1/5

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