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PD4M440L Fiches technique(PDF) 4 Page - Nihon Inter Electronics Corporation

No de pièce PD4M440L
Description  MOSFET MODULE Dual 30A 450V/500V
PDF  4 Pages
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Fabricant  NIEC [Nihon Inter Electronics Corporation]
Site Internet  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PD4M440L Fiches technique(HTML) 4 Page - Nihon Inter Electronics Corporation

  PD4M440L Datasheet HTML 1Page - Nihon Inter Electronics Corporation PD4M440L Datasheet HTML 2Page - Nihon Inter Electronics Corporation PD4M440L Datasheet HTML 3Page - Nihon Inter Electronics Corporation PD4M440L Datasheet HTML 4Page - Nihon Inter Electronics Corporation  
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PD4M440L/441L, P2H4M440L/441L
.
.
1
3
10
30
0.7
70
10
30
100
300
1000
Drain Current ID (A)
Fig.7- Drain Current vs. Switching Time (Typical)
td(off)
tf
tr
td(on)
VDD=250V
RG=7Ω
TC=25℃
80μs Pulse Test
0
100
200
300
400
500
600
30
100
300
1000
3000
-dis/dt (A/μs)
Fig.9- Reverse Recovery Characteristics (Typical)
IRrM
trr
…IS=15A
―
IS=30A
TJ=150℃
1
3
10
30
100
300
1000
0.2
0.5
1
2
5
10
20
50
100
200
Drain to Source Voltage V DS (V)
Fig.10- Maximum Safe Operating Area
TC=25℃
Tj=150℃MAX
Single Pulse
10μs
100μs
Operation in this area
is limited by R
DS(on)
1ms
DC
10ms
440L
441L
10-5
10-4
10-3
10-2
10-1
1101
1x10-2
3x10-2
1x10-1
3x10-1
1
3
1x101
PULSE DURATION t (s)
Fig.11- Normalized Transient Thermal Impedance (MOSFET)
Per Unit Base
R
th(j-c)= 0.56℃/W
1 Shot Pulse
0
0.4
0.8
1.2
0
10
20
30
40
50
Source to Drain Voltage VSD (V)
Fig.8- Source to Drain Diode
Forward Characteristics (Typical)
T
J=125℃
T
J=25℃



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