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FTK0980P Fiches technique(PDF) 3 Page - First Silicon Co., Ltd |
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FTK0980P Fiches technique(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 5 page ![]() 100V N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Characteristics Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 2019. 03. 06 3/5 Revision No : 0 FTK0980P |
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