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TSV792 Fiches technique(PDF) 6 Page - STMicroelectronics |
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TSV792 Fiches technique(HTML) 6 Page - STMicroelectronics |
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6 / 36 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit IOUT ISINK OUT connected to VCC+, -40 °C ≤ T ≤ 125 °C mA 35 ISOURCE OUT connected to VCC-, T = 25°C 50 60 OUT connected to VCC-, -40 °C ≤ T ≤ 125 °C 40 ICC Supply current (by operational amplifier) T = 25 °C 5.5 6 mA -40 °C ≤ T ≤ 125 °C 6 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 22 pF 35 50 MHz SR Slew rate RL = 10 kΩ, CL = 22 pF, AV = 1 V/V, 10 % to 90 % 30 V/µs CR Cross talk VOUT = 4 Vpp, RL = 10 kΩ, AV = +101, f = 1 kHz 126 dB Φm Phase margin RL = 10 kΩ 53 degrees en Input voltage noise density f = 10 Hz 140 nV/√Hz f = 100 Hz 43 f = 10 kHz 6.5 en p-p Input noise voltage 0.1 Hz ≤ f ≤ 10 Hz 9 µVpp Cin Input capacitance Differential 6.3 pF Common mode 1.6 1. See Section 5.2 Input offset voltage drift overtemperature. 2. See Section 5.3 Long term input offset voltage drift. 3. Guaranteed by characterization. TSV791, TSV792 Electrical characteristics DS13480 - Rev 1 page 6/36 |
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