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ISCN253P Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce ISCN253P
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN253P Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
ISCN253P
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -210V(Min)
·
Low Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -1A, IB= -0.05A)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for switching regulators, DC/DC converters and
High frequency power amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-210
V
VCEO
Collector-Emitter Voltage
-210
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-3.0
A
ICM
Collector Current-Peak
-4.0
A
PC
Collector Power Dissipation@ Ta=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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