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ISCN252I Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce ISCN252I
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN252I Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCN252I
DESCRIPTION
·
High Collector Current-IC= 3.0A
·
Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A
·
Good Linearity of hFE
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Suited for the output stage of 3 watts audio amplifier,
voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3.0
A
ICP
Collector Current-Pulse
7.0
A
PC
Collector Power Dissipation
@ Ta=25℃
1.0
W
Collector Power Dissipation
@ TC=25℃
10
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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