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IRFP048R Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce IRFP048R
Description  iscN-Channel MOSFET Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP048R Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  IRFP048R Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRFP048R Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
iscN-Channel MOSFET Transistor
IRFP048R
·
FEATURES
·
Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V
·
Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Switching Voltage Regulators
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
70
A
IDM
Drain Current-Single Pulsed
290
A
PD
Total Dissipation @TC=25℃
190
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.8
℃
/W


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