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BDX53F Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce BDX53F
Description  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
PDF  4 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BDX53F Fiches technique(HTML) 2 Page - STMicroelectronics

  BDX53F Datasheet HTML 1Page - STMicroelectronics BDX53F Datasheet HTML 2Page - STMicroelectronics BDX53F Datasheet HTML 3Page - STMicroelectronics BDX53F Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IE = 0)
VCE = 80 V
0.5
mA
ICBO
Collector Cut-off
Current (IB = 0)
VCB = 160 V
0.2
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
5mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 50 mA
160
V
VCE(sat)
∗ Collector-emitter
Saturation Voltage
IC = 2 A
IB =10 mA
2
V
VBE(sat)
∗ Base-emitter
Saturation Voltage
IC = 2 A
IB =10 mA
2.5
V
hFE
∗
DC Current Gain
IC = 2 A
VCE = 5 V
IC = 3 A
VCE = 5 V
500
150
VF
∗
Parallel Diode Forward
Voltage
IF = 2 A
2.5
V
hfe
∗
Small Signal Current
Gain
IC = 0.5 A
f = 1MHz
VCE = 2 V
20
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDX53F / BDX54F
2/4



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