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80N08G-TA3-R Fiches technique(PDF) 5 Page - VBsemi Electronics Co.,Ltd

No de pièce 80N08G-TA3-R
Description  N-Channel 80 V (D-S) MOSFET
PDF  8 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

80N08G-TA3-R Fiches technique(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
0
15
30
45
60
75
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
0
15
30
45
60
75
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
T
A - Ambient Temperature (°C)
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
80N08G-TA3-R
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