AF9902M datasheet(3/8 Pages) ANACHIP

3 / 8 page

AF9902M

2N and 2P-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Sep 22, 2005

3/8

Electrical Characteristics (T

J=25ºC unless otherwise specified)

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-On Delay Time (Note 3)

Rise Time

td(off)

Turn-Off Delay Time

Fall-Time

N-Channel

VDS=15V, VGS=5V

ID=1A, RG=3.3Ω,

RD=15Ω

P-Channel

VDS=-15V, VGS=-5V

ID=-1A, RG=3.3Ω,

RD=15Ω

630

1000

Ciss

Input Capacitance

690

1100

140

Coss

Output Capacitance

170

Crss

Reverse Transfer Capacitance

N-Channel

VGS=0V, VDS=25V

f=1.0MHz

P-Channel

VGS=0V, VDS=-25V

f=1.0MHz

Source-Drain Diode

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IS=1.2A, VGS=0V

1.2

VSD

Forward On Voltage (Note 3)

IS=-1.2A, VGS=0V

-1.2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Channel

IS=4A, VGS=0V

dl/dt=100A/µs

P-Channel

IS=-3A, VGS=0V

dl/dt=-100A/µs

Note 1: Surface Mounted on 1 in

2 copper pad of FR4 board; t ≤10sec; 186ºC/W when mounted on Min. copper pad.

Note 2: Pulse width limited by Max. junction temperature

Note 3: Pulse width < 300us, duty cycle < 2%.

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