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BUL804 Fiches technique(PDF) 1 Page - STMicroelectronics |
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BUL804 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() 1/7 July 2005 n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED APPLICATIONS n DEDICATED FOR PFC SOLUTION IN HALF-BRIDGE VOLTAGE FED TOPOLOGY n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology. Figure 1: Package Figure 2: Internal Schematic Diagram Table 1: Order Codes 1 2 3 TO-220 Part Number Marking Package Packaging BUL804 BUL804 TO-220 Tube BUL804 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Rev. 1 |
Numéro de pièce similaire - BUL804 |
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Description similaire - BUL804 |
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