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FDMS3602S Fiches technique(PDF) 8 Page - ON Semiconductor

No de pièce FDMS3602S
Description  PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET
PDF  15 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3602S Fiches technique(HTML) 8 Page - ON Semiconductor

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Typical Characteristics (Q2 N-Channel) T
J = 25°C unless otherwise noted.
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
Figure24. ForwardBiasSafe
Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
0
1020
3040
50
0
2
4
6
8
10
ID = 26 A
VDD = 16 V
VDD = 10 V
Qg, GATE CHARGE (nC)
VDD = 13 V
0.1
1
10
50
100
1000
10000
25
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.01
0.1
1
10
100 300
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
25
50
75
100
125
150
0
30
60
90
120
150
RθJC = 2 oC/W
VGS = 4.5 V
Limited by Package
VGS = 10 V
TC, CASE TEMPERATURE (
oC)
0.01
0.1
1
10
100200
0.01
0.1
1
10
100
200
100 μs
DC
100 ms
10 ms
1 ms
1s
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 120 oC/W
TA = 25 oC
10s
10-4
10-3
10-2
10-1
110
100
1000
1
10
100
1000
10000
SINGLE PULSE
RθJC = 2
oC/W
t, PULSE WIDTH (sec)
www.onsemi.com
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