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WSF3040 Fiches technique(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF3040 Fiches technique(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page ![]() Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 43 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 1 30 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 11 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 9 A IDM Pulsed Drain Current 2 112 A EAS Single Pulse Avalanche Energy 3 53 mJ IAS Avalanche Current 22 A PD@TC=25℃ Total Power Dissipation 4 37.5 W PD@TA=25℃ Total Power Dissipation 4 2 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 4 ℃ /W BVDSS RDSON ID 30V 1 0mΩ 43A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO -252 Pin Configuration Product Summery The WSF3040 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF3040 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. WSF3040 N-Ch MOSFET Page 1 www.winsok.tw Dec.2014 |
Numéro de pièce similaire - WSF3040 |
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Description similaire - WSF3040 |
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