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WSF80N06 Fiches technique(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No de pièce WSF80N06
Description  N-Ch MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Site Internet  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF80N06 Fiches technique(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V , ID=45A
---
mΩ
VGS=10V , ID=30A
---
VGS(th) Gate Threshold Voltage
VGS=VDS , ID =250uA
1
1.5
3
V
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25℃
---
---
10
uA
VDS=48V , VGS=0V , TJ=125℃
---
---
250
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
Qg
Total Gate Charge
---
33
45
nC
Qgs
Gate-Source Charge
---
5
---
Qgd
Gate-Drain Charge
---
21
---
Td(on)
Turn-On Delay Time
---
10
ns
Tr
TRise ime
---
43
Td(off)
Turn-Off Delay Time
---
47
Tf
TFall ime
---
80
Ciss
Input Capacitance
---
3230
pF
Coss
Output Capacitance
---
260
---
Crss
Reverse Transfer Capacitance
---
180
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VSD
Diode Forward Voltage
VGS=0V , IS=45A , TJ=25℃
---
---
1.3
V
trr
Reverse Recovery Time
---
30
---
nS
Qrr
Reverse Recovery Charge
---
nC
18
---
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
7.2
12
8.3
15
Page 2
www.winsok.tw
Dec.2014
IF=10A ,dI/dt=100A/µs,TJ=25℃
---
---
---
---
ID=30A
VDS=48V
VGS=4.5V
VDS=30V
ID=30A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
N-Ch MOSFET
WSF80N06
--



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