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AS29F040-150TC Fiches technique(PDF) 8 Page - Alliance Semiconductor Corporation

No de pièce AS29F040-150TC
Description  5V 512K x 8 CMOS FLASH EEPROM
PDF  18 Pages
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Fabricant  ALSC [Alliance Semiconductor Corporation]
Site Internet  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS29F040-150TC Fiches technique(HTML) 8 Page - Alliance Semiconductor Corporation

Back Button AS29F040-150TC Datasheet HTML 4Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 5Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 6Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 7Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 8Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 9Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 10Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 11Page - Alliance Semiconductor Corporation AS29F040-150TC Datasheet HTML 12Page - Alliance Semiconductor Corporation Next Button
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* The system software should check the status of DQ3 prior to and
following each subsequent sector erase command to ensure command
completion. The device may not have accepted the command if DQ3 is
high on second status check.
Write program command sequence
(see below)
DATA poll device-program
Programming completed
5555h/AAh
2AAAh/55h
5555h/A0h
Program address/program data
Program command sequence
Erase complete
DATA polling or toggle bit
successfully completed
Write erase command sequence
(see below)
5555h/AAh
2AAAh/55h
5555h/80h
Chip erase command sequence
5555h/AAh
2AAAh/55h
5555h/10h
Sector erase command sequence
Sector address/30h
Sector address/30h
Sector address/30h
Optional multiple
sector erase commands*
5555h/AAh
2AAAh/55h
5555h/80h
5555h/AAh
2AAAh/55h



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