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WSF07N10 Fiches technique(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No de pièce WSF07N10
Description  N-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Site Internet  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF07N10 Fiches technique(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
1A
---
195
250
m
Ω
VGS=
6V , ID=1A
---
240
320
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.5
2.0
3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.57
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
5A
---
1
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
Qg
Total Gate Charge (10V)
VDS=
50V , VGS=10V , ID=1.3A
---
5.2
---
nC
Qgs
Gate-Source Charge
---
0.75
---
Qgd
Gate-Drain Charge
---
1.4
---
Td(on)
Turn-On Delay Time
VDD=
30V , VGS=10V , RG=6Ω
ID=1A
, RL=30Ω
---
6
---
ns
Tr
Rise Time
---
10
---
Td(off)
Turn-Off Delay Time
---
10
---
Tf
Fall Time
---
6
---
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
---
320
---
pF
Coss
Output Capacitance
---
22
---
Crss
Reverse Transfer Capacitance
---
13
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
3
A
Diode Forward Voltage
2
VGS=0V , IS=
3A , TJ=25℃
---
---
1.
2
V
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2017
WSF07N10
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
VSD



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