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IS25LP064A-RBLE1 Fiches technique(PDF) 88 Page - Integrated Silicon Solution, Inc

No de pièce IS25LP064A-RBLE1
Description  3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  99 Pages
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Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LP064A-RBLE1 Fiches technique(HTML) 88 Page - Integrated Silicon Solution, Inc

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IS25LP064A/032A
Integrated Silicon Solution, Inc.- www.issi.com
88
Rev. A
11/06/2015
9.8 POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding
a simple pull-up resistor on CE# is recommended.)
Power up timing
VCC
VCC(max)
VCC(min)
V(write inhibit)
Reset State
tVCE
tPUW
Read Access Allowed
Device fully
accessible
Chip Selection Not Allowed
All Write Commands are Rejected
Symbol
Parameter
Min.
Max
Unit
tVCE
(1)
Vcc(min) to CE# Low
1
ms
tPUW
(1)
Power-up time delay to write instruction
1
10
ms
VWI
(1)
Write Inhibit Voltage
2.1
V
Note: These parameters are characterized and not 100% tested.



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