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FDP2D3N10C Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce FDP2D3N10C
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FDP2D3N10C Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
FDP2D3N10C
·
FEATURES
·
With TO-220 packaging
·
Drain Source Voltage-
: VDSS ≥ 100V
·
Static drain-source on-resistance:
RDS(on) ≤ 2.3mΩ@VGS=10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Power supply
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous;@Tc=25℃
222
A
PD
Total Dissipation
214
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.7
℃
/W


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