BCW68 datasheet(1/3 Pages) PJSEMI

No de pièce	BCW68

Description	PNP Silicon Epitaxial Planar Transistor

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Fabricant	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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BCW68

PNP Silicon Epitaxial Planar Transistor

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Revis

ion：1.0 Oct-2017

Features



For high current application



The transistor is subdivided into three groups F, G

and H according to its DC current gain.

Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

60

V

Collector Emitter Voltage

-VCEO

45

V

Emitter Base Voltage

-VEBO

5

V

Collector Current

-IC

800

mA

Peak Collector Current

-ICM

1

A

Base Current

-IB

100

mA

Peak Base Current

-IBM

200

mA

Power Dissipation

Ptot

200

mW

Junction Temperature

TJ

150

O

C

Storage Temperature Range

TSTG

- 55 to + 150

O

C

1.B 2.E 3.C

SOT-23

1

2

3

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