2SD1691TF datasheet(2/3 Pages) PJSEMI

No de pièce	2SD1691TF

Description	Silicon NPN Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Site Internet	http://www.pingjingsemi.com/MainEn/Main.aspx

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2 / 3 page

2SD1691TF

Silicon NPN Power Transistor

www.pingjingsemi.com

Revision:1.0

Sept-2018

2 / 3

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Min.

Max.

Unit

Collector-base breakdown voltage

at IC = 100

μA, IE = 0

V(BR)CBO

Collector-emitter breakdown voltage

at IC = 1 mA, IB = 0

V(BR)CEO

Emitter-base breakdown voltage

at IE = 100

μA, IC = 0

V(BR)EBO

DC Current Gain

at VCE = 1 V, IC = 0.1 A

at VCE = 1 V, IC = 2 A

Current Gain Group

at VCE = 1 V, IC = 5 A

hFE

100

160

200

320

400

Collector Base Cutoff Current

at VCB = 50 V, IE=0

ICBO

µA

Emitter Base Cutoff Current

at VEB = 7 V, IC=0

IEBO

µA

Collector Emitter Saturation Voltage

at IC = 2 A, IB = 0.2 A

VCE(sat)

0.3

Base Emitter Saturation Voltage

at IC = 2 A, IB = 0.2 A

VBE(sat)

1.2

Turn On Time

at VCC = 10 V, IC = 2 A, IB1=-IB2=0.2A, RL=5 Ω

ton

µs

Storage Time

at VCC = 10 V, IC = 2 A, IB1=-IB2=0.2A, RL=5 Ω

tstg

2.5

µs

Fall Time

at VCC = 10 V, IC = 2 A, IB1=-IB2=0.2A, RL=5 Ω

µs

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