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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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PJM7N02SA Fiches technique(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM7N02SA Fiches technique(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 5 page  PJM7N02SA Silicon N-Channel Power MOSFET www.pingjingsemi.com 1 / 5 Revision：1.0 May-2018 Features Fast switching Low gate charge and RDS(ON) VDS=20V ID=7A PD=1. 2W RDS(ON)=26 mΩ(max) @10V Application Load/ power switching Small portable electronics Mark: M20 Absolute Maximum Ratings (Ta=25℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current 7 A IDM(1) Pulsed Drain Current 30 A RθJA Thermal Resistance from Junction toAmbient 104 ℃ /W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ Notes:1.Repetitive rating; pulse width limited by maximum junction temperature 3D 1G 2S |
Numéro de pièce similaire - PJM7N02SA |
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Description similaire - PJM7N02SA |
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