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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IXKC20N60C Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXKC20N60C Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXKC20N60C · FEATURES · High power dissipation · Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · DC/DC Converters · High Current Switching Applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 10.5 A Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 1 ℃ /W |
Numéro de pièce similaire - IXKC20N60C |
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Description similaire - IXKC20N60C |
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