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ASD33C Fiches technique(PDF) 5 Page - Applied Power Microelectronics Co.,Ltd.

No de pièce ASD33C
Description  1-Line Bi-directional TVS Diode
PDF  7 Pages
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Fabricant  APMICRO [Applied Power Microelectronics Co.,Ltd.]
Site Internet  http://www.appliedpowermicro.com/
Logo APMICRO - Applied Power Microelectronics Co.,Ltd.

ASD33C Fiches technique(HTML) 5 Page - Applied Power Microelectronics Co.,Ltd.

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Revision 12/2017
5 of 6
www.appliedpowermicro.com
ASD36C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
36
V
Breakdown Voltage
VBR
38
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 36V
Clamping Voltage
VC
48
V
IPP = 1A (8 x 20µs pulse)
Peak Pulse Current
Ipp
6
A
tp = 8/20μs
Junction Capacitance
CJ
30
pF
VR = 0V, f = 1MHz
ASD40C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
40
V
Breakdown Voltage
VBR
44
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 40V
Clamping Voltage
VC
50
V
IPP = 1A (8 x 20µs pulse)
Peak Pulse Current
Ipp
5
A
tp = 8/20μs
Junction Capacitance
CJ
20
pF
VR = 0V, f = 1MHz
ASD33C through ASD40C



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