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ISC026N03L5S Fiches technique(PDF) 4 Page - Infineon Technologies AG

No de pièce ISC026N03L5S
Description  OptiMOSTM Power-MOSFET, 30 V
PDF  13 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ISC026N03L5S Fiches technique(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTMPower-MOSFET,30V
ISC026N03L5S
Rev.2.0,2020-02-25
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
30
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.2
-
2
V
VDS=VGS,ID=250µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
2.8
2.2
3.5
2.6
m
Ω
VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance
RG
-
0.9
-
Ω
-
Transconductance
gfs
55
110
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
1700
-
pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance
Coss
-
600
-
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
88
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
4.2
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Rise time
tr
-
5.2
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
21
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Fall time
tf
-
3.6
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
4.4
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
2.7
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
4.0
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
5.6
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
13
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.6
-
V
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
26
-
nC
VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
11
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
16
-
nC
VDD=15V,VGS=0V
1) See
″Gate charge waveforms″ for parameter definition



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