DF2B6M4ASL datasheet(2/9 Pages) TOSHIBA

No de pièce	DF2B6M4ASL

Description	ESD Protection Diodes Silicon Epitaxial Planar

PDF	9 Pages

Scroll/Zoom	100%

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2 / 9 page

DF2B6M4ASL

5. Example of Circuit Diagram

Example of Circuit Diagram

6. Quick Reference Data

Quick Reference Data

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Symbol

VRWM

RDYN

VESD

Note

(Note 1)

(Note 2)

(Note 3)

Test Condition



VR = 0 V, f = 1 MHz



Min



Typ.



0.15

0.7



Max

5.5

0.2



Unit

Ω

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.

Note 3: Criterion: No damage to devices.

2019-08-05

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

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