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VBKB5245 Fiches technique(PDF) 2 Page - VBsemi Electronics Co.,Ltd

No de pièce VBKB5245
Description  N- and P-Channel V(D-S) MOSFET
PDF  8 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VBKB5245 Fiches technique(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
3.4
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=4A, VGS=4.5V
34
45
mΩ
RDS(on)2
ID=1A, VGS=2.5V
49
67
mΩ
RDS(on)3
ID=0.5A, VGS=1.8V
74
115
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
345
pF
Output Capacitance
Coss
67
pF
Reverse Transfer Capacitance
Crss
52
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9.2
ns
Rise Time
tr
60
ns
Turn-OFF Delay Time
td(off)
30
ns
Fall Time
tf
38
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=4A
4.7
nC
Gate-to-Source Charge
Qgs
0.65
nC
Gate-to-Drain “Miller” Charge
Qgd
1.6
nC
Diode Forward Voltage
VSD
IS=4A, VGS=0V
0.8
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--0.4
--1.3
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1.5A
3.6
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--3A, VGS=--4.5V
65
85
mΩ
RDS(on)2
ID=--1A, VGS=--2.5V
98
137
mΩ
RDS(on)3
ID=--0.5A, VGS=--1.8V
155
235
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
320
pF
Output Capacitance
Coss
66
pF
Reverse Transfer Capacitance
Crss
50
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.1
ns
Rise Time
tr
21
ns
Turn-OFF Delay Time
td(off)
37
ns
Fall Time
tf
32
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4.5V, ID=--3A
4.0
nC
Gate-to-Source Charge
Qgs
0.6
nC
Gate-to-Drain “Miller” Charge
Qgd
1.1
nC
Diode Forward Voltage
VSD
IS=--3A, VGS=0V
--0.83
--1.2
V
VBKB5245
www.VBsemi.com
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